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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4330 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 8A *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 100V (Min) *High Switching Speed APPLICATIONS *Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 150 V 100 V 7 V 10 A 20 A 5 A 40 W .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 3A ; IB= 0.3A, L= 1mH IC= 6A; IB= 0.3A B 2SC4330 MIN 100 TYP. MAX UNIT V 0.3 0.5 1.2 1.5 10 10 1.0 10 V V V V A A mA A IC= 8A; IB= 0.4A B IC= 6A; IB= 0.3A B IC= 8A; IB= 0.4A B VCB= 150V; IE= 0 w w K 200-400 scs .i w VEB= 5V; IC= 0 VCE= 100V; VBE= -1.5V VCE= 100V; VBE= -1.5V;Ta=125 IC= 1A ; VCE= 2V IC= 2A ; VCE= 2V .cn mi e 100 100 60 200 400 IC= 6A ; VCE= 2V hFE-2 classifications M 100-200 L 150-300 isc Websitewww.iscsemi.cn 2 |
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